| PART |
Description |
Maker |
| 2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2S |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
BJT 双极型晶体管
|
NEC Corp.
NEC, Corp.
|
| 2SC4957 2SC4957-T1 2SC4957-T2 2SC4957NE68539E 2SC4 |
Microwave low-noise amplification silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD 高频低噪声放大器NPN硅外延晶体管4个引脚微型模
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC, Corp.
NEC Corp.
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| 2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER
|
California Eastern Labs
|
| MAX2650 |
DC-to-Microwave, 5V Low-Noise Amplifier
|
MAXIM - Dallas Semiconductor
|
| TD-8030 TD-8031 TD-8059 TD-81 TD-8151 TD-8152 TD-8 |
MICROWAVE NOISE TUBES & NOISE SOURCES
MICROWAVE NOISE TUBES & NOISE SOURCES 微波噪声
|
CLARE[Clare, Inc.]
CLARE[Clare Inc.]
Clare Inc.
|
| 2SC3604 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
New Jersey Semi-Conductor Products, Inc.
|
| 2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| MGFC1801 |
FOR MICROWAVE LOW NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ATR0610-PQQ ATR0610 |
2.7 V GPS LOW NOISE AMPLIFIER RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| 2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp.
NEC, Corp.
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
